TEM MICROSTRUCTURE ANALYSIS FOR COMPRESSIVELY STRESSED Pb(Zr,Ti)O3 THIN FILMS BY CSD-DERIVED LaNiO3 BOTTOM ELECTRODES

被引：2
|
作者：
Ozawa, Kotaro [1 ]
Ishizuka, Masaaki [1 ]
Sakamoto, Naonori [1 ]
Ohno, Tomoya [2 ]
Kiguchi, Takanori [3 ]
Matsuda, Takeshi [2 ]
Konno, Toyohiko [3 ]
Wakiya, Naoki [1 ]
Suzuki, Hisao [4 ]
机构：
[1] Shizuoka Univ, Dept Mat Sci & Chem Engn, Hamamatsu, Shizuoka 4328561, Japan
[2] Kitami Inst Technol, Dept Mat Sci, Kitami, Hokkaidoh 0908507, Japan
[3] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[4] Shizuoka Univ, Grad Sch Sci & Technol, Hamamatsu, Shizuoka 4328561, Japan
来源：
FUNCTIONAL MATERIALS LETTERS | 2012年 / 5卷 / 02期
关键词：
CSD; thin film; PZT; stress; TEM; CHEMICAL SOLUTION DEPOSITION; ELECTRICAL-PROPERTIES; PIEZOELECTRIC PROPERTIES; RESIDUAL-STRESS; ORIENTATION; DEPENDENCE; THICKNESS; GROWTH; WAFER; FIELD;
D O I：
10.1142/S1793604712600168
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pb(Zr,Ti)O-3 (PZT) possesses superior ferroelectric and piezoelectric properties arisen near a morphotropic phase boundary (MPB) composition, PbZr0.53Ti0.47O3. We have prepared a PZT (MPB composition) thin film and perovskite-type LaNiO3 (LNO) electrodes on Si substrate by chemical solution deposition (CSD) method. The CSD-derived LNO bottom electrode applied compressive stress to the PZT film and enhanced the ferroelectric properties of the PZT film. TEM and SAED revealed that stress distribution and microstructures of the PZT/LNO/Si films effectively influenced the ferroelectric properties.
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页数：4
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