Fast Model of Electron Transport for Radiographic Spectrum Simulation

被引:1
|
作者
Deresch, A. [1 ]
Bellon, C. [1 ]
Jaenisch, G. -R. [1 ]
Ewert, U. [1 ]
机构
[1] BAM, Fed Inst Mat Res & Testing, D-12205 Berlin, Germany
关键词
D O I
10.1063/1.4914656
中图分类号
O59 [应用物理学];
学科分类号
摘要
Correctly modeling the continuous photon spectrum of X-ray tubes requires detailed knowledge of the probability distribution of electron properties at the time of X-ray photon creation, in particular electron energy, depth within the target, and direction of movement. Semi-analytical X-ray spectrum models frequently assume a very simplified or even uniform distribution of electron direction. In the case of thick targets and small deviations from normal incidence this is a useful approximation. For thin targets or large deviations from normal incidence the correct distribution of electron directions becomes more important. As calculation speed is an important aspect of semi-analytical models compared to Monte Carlo simulations, fast evaluation of the distribution of electron properties is highly desirable. The approach presented here numerically evaluates the evolution of a discrete probability distribution of electron properties due to single electron scatter interactions within a plane target. This allows capturing the important aspects of the electron distribution while achieving runtimes of a few seconds up to a minute on a standard office PC.
引用
收藏
页码:579 / 585
页数:7
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