Terahertz transitions in n-type Ge/SiGe Parabolic Quantum Wells

被引:0
|
作者
Ciano, C. [1 ]
Montanari, M. [1 ,2 ]
Graziotto, L. [3 ]
Persichetti, L. [1 ]
Corley, C. [4 ]
Baldassarre, L. [3 ]
Ortolani, M. [3 ]
Di Gaspare, L. [1 ]
Capellini, G. [1 ,4 ]
Stark, D. [5 ]
Scalari, G. [5 ]
Virgilio, M. [6 ]
De Seta, M. [1 ]
机构
[1] Univ Roma Tre, Dipartimento Sci, I-00154 Rome, Italy
[2] Univ Firenze, Dipartimenti Fis & Astron, I-50019 Sesto Fiorentino, Italy
[3] Sapienza Univ Roma, Dipartimento Fis, I-00185 Rome, Italy
[4] IHP Leibniz Inst Innovat Mikroelekt, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[5] Swiss Fed Inst Technol, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[6] Univ Pisa, I-56127 Pisa, Italy
关键词
ABSORPTION;
D O I
10.1109/IRMMW-THz50926.2021.9567472
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ge/SiGe heterostructures are promising in the view of silicon-foundry compatible THz optoelectronic applications. Here we present a structural and optical characterization of Ge/SiGe parabolic quantum wells that represent ideal systems for room-temperature THz emission and strong light-matter coupling investigation.
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页数:2
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