Electric field emission and anomalies of electrical conductivity above room temperature in heterogeneous NiO-SnO2 nano-ceramic composites

被引:31
|
作者
Karmakar, S. [1 ]
Parey, Vanshree [2 ]
Mistari, Chetan D. [3 ]
Thapa, Ranjit [2 ]
More, M. A. [3 ]
Behera, D. [1 ]
机构
[1] Natl Inst Technol Rourkela, Dept Phys & Astron, Rourkela 769008, Odisha, India
[2] SRM Univ, Dept Phys, Amaravati 522502, Andhra Pradesh, India
[3] Savitribai Phule Pune Univ, Dept Phys, Pune 411007, Maharashtra, India
关键词
POLARON TUNNELING MODEL; DIELECTRIC BEHAVIOR; SPECTROSCOPY; IMPEDANCE; TRANSPORT; SURFACE; NIO;
D O I
10.1063/1.5123997
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microstructural NiO-SnO2 nano-ceramic matrix was synthesized via a solgel auto-combustion technique with a perspective to investigate its noteworthy electric field emission and temperature-induced conduction anomaly. Exceptional field emission performance of nickel-tin oxide composites was discovered with a low turn-on field of 3.9 V/mu m and a threshold field of 5.30 V/mu m with a good field emission current density of 110.44 mu A/cm(2) and current stability. Density functional theory was employed to estimate its local work function (Phi) 3.365 eV, and the field enhancement factor (beta) was obtained as 1570 by Fowler-Nordheim plot. The anomalies in conductivity spectra at 523 K were detected by a number of physical properties measurement including impedance, conductivity, dielectric, and differential scanning calorimetry with thermal expansion. These phenomena can be rationalized in terms strain-dependent thermal hysteresis effects and localized/delocalized e(g) electron with a transition from inferior conductive linkage [Ni2+-O2--Ni2+] and [Sn2+/Sn4+-O2--Sn2+/Sn4+] to higher conductive linkage [Ni2+-Ni3+] and [Sn2+-Sn4+] of coupled NiO-SnO2 matrix. The temperature dependence frequency exponent (n), ln tau, R-g, R-gb, C-g, and C-gb support additionally the conduction anomaly behavior, and the variation of dielectric constant (epsilon(r)) and loss (tan delta) with temperature around 523 K has been explained in terms of the reduction of space charge layers due to reversal movement of delocalized e(g) electrons from the grain boundary limit. The frequency dispersing impedance, conductivity, and dielectric spectra with elevated temperature were also demonstrated to comprehend its conduction mechanism with theoretical correlation. Published under license by AIP Publishing.
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页数:16
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