Impacts of Biaxial Tensile Strain in Double-gate Tunneling Field-effect-transistor (DG-TFET) with a Monolayer WSe2 Channel

In this work, biaxial tensile strain effects are systematically investigated in double-gate tunneling field-effect-transistor (DG-TFET) with a monolayer WSe2 channel. Results of the first-principles calculations show that decreased bandgap and reduced effective masses can be obtained when the biaxial tensile strain is applied to WSe2 channel. However, in terms of the strain-induced channel-current modulations, it is found that the strain should be well optimized for the largest performance enhancement. Based on our calculations, it is shown that, under 2% biaxial tensile strain, the ON current and transconductance can be improved by a factor of 8.05 and 8.9, respectively.