Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN

被引：1
|
作者：
Goldys, EM [1 ]
Godlewski, M [1 ]
Kaminska, E [1 ]
Piotrowska, A [1 ]
Koley, G [1 ]
Spencer, MG [1 ]
Eastman, LF [1 ]
机构：
[1] Macquarie Univ, Div Informat & Commun Sci, Sydney, NSW 2109, Australia
来源：
COMMAD 2000 PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/COMMAD.2000.1023006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the observation of intense satellite lines in the emission of p-GaN excited at 325 nm. Up to six fines are observed at the high-energy wing of the 3.1 eV emission, with separations suggesting a multiple LO phonon-related effect. The observed, process is interpreted as hot exciton luminescence, enhanced by potential fluctuations. Kelvin probe force microscopy was used to image the local electrical properties of these films. The results correspond well with the behaviour of the conduction band edge fluctuations revealed in the measurements of hot exciton photoluminescence.
引用
收藏
页码：539 / 542
页数：4
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