Electroluminescence properties of SiN molecule under different external electric fields

被引:8
|
作者
Xu Guo-Liang [1 ]
Xie Hui-Xiang [1 ]
Yuan Wei [1 ]
Zhang Xian-Zhou [1 ]
Liu Yu-Fang [1 ]
机构
[1] Henan Normal Univ, Coll Phys & Informat Engn, Xinxiang 453007, Peoples R China
关键词
SiN; external electric field; excited properties; EMISSION-SPECTRUM; EXCITATION; TRANSITION; LUMINESCENCE; SYSTEM; BANDS;
D O I
10.7498/aps.61.043104
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In order to find how the external electric field affects the SiN molecule completely, in the present work the density functional B3P86/6-31(g) method is adopted to optimize the ground state structure and the time dependent density functional theory TDDFT/6-31(g) is used to study the absorption spectra, emission spectra, excited energies, oscillator strengths and dipole moments of SiN molecule under different external electric fields. We find that the absorption spectrum, excited energy, oscillator strength and dipole moment of SiN molecule are affected strongly by external electric field. One of the valuable results is that the absorption spectra in violet light and blue wavelength ranges of SiN molecule each have a red shift. The luminescence mechanism of visible light for SiN molecule is also investigated and compared with the experimental data.
引用
收藏
页数:6
相关论文
共 21 条
  • [1] A complete active space self-consistent field and multireference configuration interaction analysis of the SiN B (2)Sigma(+)->X (2)Sigma(+) transition moment
    Borin, AC
    [J]. CHEMICAL PHYSICS LETTERS, 1996, 262 (1-2) : 80 - 86
  • [2] EMISSION-SPECTRUM OF SIN
    BREDOHL, H
    DUBOIS, I
    HOUBRECHTS, Y
    SINGH, M
    [J]. CANADIAN JOURNAL OF PHYSICS, 1976, 54 (06) : 680 - 688
  • [3] MULTIREFERENCE (SINGLE) AND DOUBLE-EXCITATION - CONFIGURATION-INTERACTION (MRD-CI) STUDY OF THE RADICALS CN, SIN, AND SIP, AND THE LINEAR STRUCTURES OF HSIP AND SIPH IN THEIR ELECTRONIC GROUND AND VARIOUS EXCITED-STATES
    BRUNA, PJ
    DOHMANN, H
    PEYERIMHOFF, SD
    [J]. CANADIAN JOURNAL OF PHYSICS, 1984, 62 (12) : 1508 - 1523
  • [4] Ab initio study of the X(2)Sigma(+) and A(2)Pi states of the SiN radical
    Cai, ZL
    Martin, JML
    Francois, JP
    Gijbels, R
    [J]. CHEMICAL PHYSICS LETTERS, 1996, 252 (5-6) : 398 - 404
  • [5] [陈青云 CHEN Qingyun], 2008, [发光学报, Chinese Journal of Luminescence], V29, P363
  • [6] Ab Initio Study of Transition Levels for Intrinsic Defects in Silicon Nitride
    Di Valentin, Cristiana
    Palma, Giorgio
    Pacchioni, Gianfranco
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (02): : 561 - 569
  • [7] THE INFRARED-EMISSION SPECTRUM OF SIN BETWEEN 2.2-MU-M AND 4.4-MU-M
    ELHANINE, M
    HANOUNE, B
    GUELACHVILI, G
    AMIOT, C
    [J]. JOURNAL DE PHYSIQUE II, 1992, 2 (04): : 931 - 938
  • [8] THE 2-0 BAND OF THE A2PI-I[-X2SIGMA+ SYSTEM OF SIN NEAR 3.3 MU-M
    FOSTER, SC
    LUBIC, KG
    AMANO, T
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1985, 82 (02): : 709 - 713
  • [9] Frisch M., 2004, GAUSSIAN 03 REVISION, DOI DOI 10.1016/J.MOLSTRUC.2017.03.014
  • [10] Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer
    Huang Rui
    Wang Dan-Qing
    Song Jie
    Ding Hong-Lin
    Wang Xiang
    Guo Yan-Qing
    Chen Kun-Ji
    Xu Jun
    Li Wei
    Ma Zhong-Yuan
    [J]. ACTA PHYSICA SINICA, 2010, 59 (08) : 5823 - 5827