Effect of the phenyl ring orientation in the polystyrene buffer layer on the performance of pentacene thin-film transistors

被引：31

作者：

Wang, Ying ^{[1
]}

Acton, Orb ^{[1
]}

Ting, Guy ^{[1
,2
]}

Weidner, Tobias ^{[3
]}

Shamberge, Patrick J. ^{[1
]}

Ma, Hong ^{[1
]}

Ohuchi, Fumio S. ^{[1
]}

Castner, David G. ^{[3
,4
,5
]}

Jen, Alex K. -Y. ^{[1
,2
]}

机构：

[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA

[3] Univ Washington, Natl ESCA & Surface Anal Ctr Biomed Problems NESA, Seattle, WA 98195 USA

[4] Univ Washington, Dept Bioengn, Seattle, WA 98195 USA

[5] Univ Washington, Dept Chem Engn, Seattle, WA 98195 USA

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 06期

关键词：

Thin-film transistor; FIELD-EFFECT TRANSISTORS; SUM-FREQUENCY GENERATION; VIBRATIONAL SPECTROSCOPY; MOLECULAR-ORIENTATION; SURFACE; INTERFACE; VOLTAGE; ENERGY; WATER; SEMICONDUCTORS;

D O I：

10.1016/j.orgel.2010.03.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phenyl groups of polystyrene (PS) thin films untreated and thermally treated at 80 and 120 degrees C assume tilt angles of 27 degrees, 39 degrees and 62 degrees, respectively. The PS films were inserted between SiO2 and organic semiconductors as buffer layers for organic thin-film transistors (OTFTs). The results showed that a flat orientation of phenyl ring at the surface of the PS films optimized the surface energy of PS film, resulting in higher crystallinity of pentacene films deposited onto it and an improved interconnection between the pentacene crystalline domains. The device with the PS film thermally treated at 120 degrees C showed superior performance, affording a mobility as high as 4 cm(2)/V s, an on/off ratio of about 10(7)-10(8) and a threshold voltage of about 6.5 V in the saturation region. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1066 / 1073

页数：8

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