Selective area grown ZnTe nanowires as the basis for quasi-one-dimensional CdTe-HgTe multishell heterostructures

被引：3

作者：

Hajer, J. ^{[1
,2
]}

Mantei, W. ^{[1
,2
]}

Kessel, M. ^{[1
,2
]}

Bruene, C. ^{[1
,2
,5
]}

Wenner, S. ^{[3
,4
]}

van Helvoort, A. T. J. ^{[3
]}

Buhmann, H. ^{[1
,2
]}

Molenkamp, L. W. ^{[1
,2
]}

机构：

[1] Univ Wurzburg, Inst Topol Insulators, D-97074 Wurzburg, Germany

[2] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany

[3] Norwegian Univ Sci & Technol NTNU, Dept Phys, N-7491 Trondheim, Norway

[4] SINTEF Ind, Mat & Nanotechnol, N-7465 Trondheim, Norway

[5] Norwegian Univ Sci & Technol NTNU, Ctr Quantum Spintron, Dept Phys, N-7491 Trondheim, Norway

来源：

PHYSICAL REVIEW MATERIALS | 2020年 / 4卷 / 06期

关键词：

II-VI semiconductors - Cadmium telluride - Zinc compounds - Molecular beam epitaxy - Substrates;

D O I：

10.1103/PhysRevMaterials.4.066001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Selective area growth is employed in the vapor-liquid-solid molecular beam epitaxy of ZnTe nanowire arrays. Full control over the location of the individual nanowires is achieved by defined positioning of the growth catalyst. This study addresses the influence of substrate material and growth temperature on the yield of vertical nanowires. The optimized procedure provides arrays of single-crystalline free-standing nanowires with a high ensemble uniformity. The nanowires exhibit a uniform shape with a diameter of about 80 nm and reach a length of more than 3 mu m, which makes them suitable as substrates for core-shell nanowires of the topological insulator material HgTe.

引用

页数：4