Magneto-optic effects of n-type modulation-doped GaAs/(Al,Ga)As coupled double quantum wells

被引:0
|
作者
Kim, YM [1 ]
机构
[1] Dankook Univ, Dept Appl Phys, Seoul 140714, South Korea
关键词
semiconductor; mangetic field; photolummescence; quantum well;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
yPhotoluminescence measurements of strongly coupled GaAs/AlGaAs double quantum well systems were made in magnetic fields to 18 T. At low fields (below 5 T), the optical transition Landau level selection rule (Deltan = 0) was broken and forbidden transitions (Deltan not equal 0) emerged. Moreover, the lowest Landau level transition (0-0) was missing. With increasing magnetic fields, the (1-0) Landau level transition smoothly approached the (0-0) transition. Such a non-linear optical process is due to the combined effect of formation of a magnetically induced excitonic state and a scattering process induced by interface roughness.
引用
收藏
页码:475 / 478
页数:4
相关论文
共 50 条
  • [1] Quantum landau levels in n-type modulation-doped GaAs/AlGaAs coupled double quantum wells
    Jaouane, M.
    Ed-Dahmouny, A.
    Fakkahi, A.
    Arraoui, R.
    Azmi, H.
    Sali, A.
    El Sayed, M. E.
    Samir, A.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2024, 608
  • [2] Magneto-optical spectroscopy of modulation-doped GaAs AlGaAs asymmetric coupled double quantum wells
    Lee, JI
    Viswanath, AK
    Yu, S
    Shin, EJ
    Lee, KS
    Lee, HG
    Ihm, G
    SOLID STATE COMMUNICATIONS, 1999, 110 (11) : 633 - 638
  • [3] MAGNETO-OPTICS OF N-TYPE AND P-TYPE MODULATION-DOPED GAAS/ALXGA1-XAS QUANTUM WELLS
    LEE, JS
    MIURA, N
    IWASA, Y
    SURFACE SCIENCE, 1988, 196 (1-3) : 534 - 539
  • [4] Photoluminescence study of silicon donors in n-type modulation-doped GaAs/AlAs quantum wells
    Lee, S. T.
    Petrou, A.
    Dutta, M.
    Pamulapati, J.
    Physical Review B: Condensed Matter, 51 (03):
  • [5] PHOTOLUMINESCENCE STUDY OF SILICON DONORS IN N-TYPE MODULATION-DOPED GAAS/ALAS QUANTUM-WELLS
    LEE, ST
    PETROU, A
    DUTTA, M
    PAMULAPATI, J
    NEWMAN, PG
    FU, LP
    PHYSICAL REVIEW B, 1995, 51 (03): : 1942 - 1945
  • [6] LANDAU-LEVELS AND MAGNETOLUMINESCENCE OF N-TYPE GAAS-GA(AL)AS MODULATION DOPED QUANTUM-WELLS
    DELALANDE, C
    BRUM, JA
    ORGONASI, J
    MEYNADIER, MH
    BASTARD, G
    MAAN, JC
    WEIMANN, G
    SCHLAPP, W
    SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (01) : 29 - 33
  • [7] FEMTOSECOND HOLE RELAXATION IN N-TYPE MODULATION-DOPED QUANTUM-WELLS
    TOMITA, A
    SHAH, J
    CUNNINGHAM, JE
    GOODNICK, SM
    LUGLI, P
    CHUANG, SL
    PHYSICAL REVIEW B, 1993, 48 (08): : 5708 - 5711
  • [8] n-type doping modulation of double GaAs/AlGaAs quantum wells
    Jaouane, M.
    Ed-Dahmouny, A.
    Fakkahi, A.
    Arraoui, R.
    El-Bakkari, K.
    Azmi, H.
    Sali, A.
    Duque, C. A.
    COMPUTATIONAL MATERIALS SCIENCE, 2024, 238
  • [9] PHOTOLUMINESCENCE LINESHAPE OF NARROW N-TYPE MODULATION-DOPED QUANTUM-WELLS
    KUCHLER, R
    ABSTREITER, G
    BOHM, G
    WEIMANN, G
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : 88 - 91
  • [10] In-plane magnetophotoluminescence studies of modulation-doped GaAs/AlGaAs coupled double quantum wells
    Kim, Y
    Perry, CH
    Simmons, JA
    Klem, JF
    APPLIED PHYSICS LETTERS, 2000, 77 (03) : 388 - 390