A SILICON CARBIDE MEMS MICROHOTPLATE FOR NANOMATERIAL CHARACTERIZATION IN TEM

被引：0
|
作者：
Morana, B. [1 ]
Santagata, F. [1 ]
Mele, L. [1 ]
Mihailovic, M. [1 ]
Pandraud, G. [1 ]
Creemer, J. F. [1 ]
Sarro, P. M. [1 ]
机构：
[1] Delft Univ Technol, DIMES ECTM, Delft, Netherlands
来源：
2011 IEEE 24TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2011年
关键词：
LPCVD;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a SiC MEMS microhotplate designed for high temperature characterization of nanomaterials in transmission electron microscopes (TEMs). The microhotplate integrates, for the first time, a microheater of doped polycrystalline silicon carbide (poly-SiC) and electron-transparent windows of amorphous SiC (a-SiC(x)) on a freestanding membrane of undoped poly-SiC. Our work focuses on the development of the SiC layers by LPCVD, as well as on their combination in the fabrication process. The microhotplates were demonstrated to operate at temperatures well beyond 700 degrees C.
引用
收藏
页码：380 / 383
页数：4
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