XPS study during a soft and progressive sputtering of a monolayer on indium phosphide by argon cluster bombardment

被引：2
|
作者：
Aureau, Damien [1 ]
Fregnaux, Mathieu [1 ]
Njel, Christian [2 ]
Vigneron, Jackie [1 ]
Bouttemy, Muriel [1 ]
Goncalves, Anne-Marie [1 ]
Etcheberry, Arnaud [1 ]
机构：
[1] Univ Versailles, Inst Lavoisier Versailles, Versailles CEFS2, UMR CNRS UVSQ 8180, 45 Ave Etats Unis, F-78035 Versailles, France
[2] Inst Sci Analyt & Physicochim Environm & Mat, UMR Pau 5254, Aquitaine, France
来源：
SURFACE AND INTERFACE ANALYSIS | 2018年 / 50卷 / 11期
关键词：
XPS; profiling; monolayer; cluster; phosphazene; SURFACE;
D O I：
10.1002/sia.6436
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Gas cluster ion beam is performed on an ultrathin "polyphosphazene-like" film grown on indium phosphide substrates to obtain crucial properties of this model system. Unlike "standard" sputtering technique using monoatomic ions, a gentle progressive digging of this subnanometric thick layer has been realized thanks to the unique depth profiling features of gas cluster ion beam. Furthermore, our results highlight the properties of the electrochemically formed film made of phosphorus-nitrogen electron-rich chemical bond creating a strong attenuation of the photoelectron underneath. Such approach opens exciting insights in the chemical and physical analysis of sensitive surfaces as ultrathin covering layers.
引用
收藏
页码：1163 / 1167
页数：5
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