Strain induced NDR and rectification behavior of the γ-graphyne nanotubes

Current-voltage characteristics of armchair and zigzag gamma-graphyne nanotubes with three different diameters under uniaxial strain are investigated by using first-principles quantum transport calculations through density functional theory (DFT) and non-equilibrium Green's function (NEGF) method. It is shown that for a given value of bias voltage, the resulting current depends strongly on the applied load so that tensile and compressive strain can generate Negative Differential Resistance (NDR) mostly into the armchair nanotubes. Our study reveals that the rectification behavior of the systems is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands.