Electrical and optical properties of transparent conducting tin doped ZnO thin films

被引：51
|
作者：
Shelke, Vrushali [1 ]
Sonawane, B. K. [1 ]
Bhole, M. P. [1 ]
Patil, D. S. [1 ]
机构：
[1] N Maharashtra Univ, Dept Elect, Jalgaon, Maharashtra, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2012年 / 23卷 / 02期
关键词：
TEMPERATURE; DENSITY;
D O I：
10.1007/s10854-011-0462-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical, optical and structural properties of tin doped ZnO thin films were investigated for various tin (Sn) doping concentrations. Sol gel method was used to deposit the films on microscopic glass slides and silicon substrate. UV-Visible spectrometer analysis showed excellent optically transparent oscillating natures with transparency above 85% in the visible range. Band gap of 3.24 eV was deduced for Sn doping concentration of 4 at% using envelope method. Scanning electron microscopy (SEM) was employed to study the morphology of the films. Crystallinity of the film was investigated by X-Ray diffraction (XRD), which revealed polycrystalline nature with orientation towards c-axis. Resistivity of 3.11 a"broken vertical bar-cm with minimum stress value of 8.11 x 10(-3) MPa was measured for Sn doping concentration of 4 at%.
引用
收藏
页码：451 / 456
页数：6
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