Effects of an External Magnetic Field on the Magnetic Properties of Sputtered Magnetic Thin Films
被引:2
|
作者:
Ahn, Hyun Tae
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机构:
Korea Inst Sci & Technol, Optoelect Mat Ctr, Seoul 130650, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaChungnam Natl Univ, Dept Nano Mat Engn, Taejon 305764, South Korea
Ahn, Hyun Tae
[2
,3
]
Lim, Sang Ho
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h-index: 0
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South KoreaChungnam Natl Univ, Dept Nano Mat Engn, Taejon 305764, South Korea
Lim, Sang Ho
[3
]
Jee, Kwang Koo
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机构:
Korea Inst Sci & Technol, Optoelect Mat Ctr, Seoul 130650, South KoreaChungnam Natl Univ, Dept Nano Mat Engn, Taejon 305764, South Korea
Jee, Kwang Koo
[2
]
论文数: 引用数:
h-index:
机构:
Han, Jun Hyun
[1
]
机构:
[1] Chungnam Natl Univ, Dept Nano Mat Engn, Taejon 305764, South Korea
[2] Korea Inst Sci & Technol, Optoelect Mat Ctr, Seoul 130650, South Korea
[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
magnetic thin film;
magnetic anisotropy;
magnetic field sputtering;
finite element method;
NI-MN-GA;
ORIENTATION;
TEXTURE;
PHASE;
D O I:
10.3365/KJMM.2011.49.6.505
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
A magnetic device which enables the application of a strong and uniform magnetic field to thin film during sputtering was designed for controlling the magnetic anisotropy using a three dimensional finite element method, and the effects of the external magnetic field on the magnetic properties of sputtered thin films were investigated. Both the intensity and the uniformity of the magnetic flux density in the sputter zone (50 mm x 50 mm) was dependent on not only the shape and size of the magnet device but also the magnitude of stray fields from the magnet. For the magnet device in which the distance between two magnets or two pure iron bars was 80-90 mm, the magnetic flux density along the direction normal to the external magnetic field direction was minimum. The two row magnets increased the magnetic flux density and uniformity along the external magnetic field direction. An Fe thin film sputtered using the optimized magnet device showed a higher remanence ratio than that fabricated under no external magnetic field.