Bio-polysaccharide electrolyte gated photoelectric synergic coupled oxide neuromorphic transistor with Pavlovian activities

被引:38
|
作者
Guo, Yan Bo [1 ,2 ,3 ,4 ]
Zhu, Li Qiang [1 ,2 ]
Long, Ting Yu [1 ,2 ,3 ]
Wan, Dong Yun [3 ]
Ren, Zheng Yu [1 ,2 ,4 ]
机构
[1] Ningbo Univ, Sch Phys Sci & Technol, Ningbo 315211, Zhejiang, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[3] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
[4] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
RESISTIVE SWITCHING MEMORY; SKIN;
D O I
10.1039/c9tc06749c
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recently, realizing artificial perception learning systems at the hardware level based on neuromorphic devices has become a new research branch in artificial intelligence technology. Here, we report multi-functional starch-based bio-polysaccharide electrolyte gated photoelectronic synergic coupled indium-gallium-zinc oxide (IGZO) neuromorphic transistors. Both light illumination and voltage biasing will modulate the channel conductance. Thanks to strong electrical-double-layer (EDL) coupling behaviors of the starch-based bio-polysaccharide electrolyte, the neuromorphic transistor can operate at low voltages. Interestingly, the neuromorphic transistor exhibits long-term memory response behaviors under light stimuli. Moreover, photoelectric synergic spatiotemporal integration behaviors are demonstrated by introducing a light spike stimulus and voltage spike stimulus in a temporal and spatial manner. Furthermore, connections between electric spikes and light spikes have been established, which results in the demonstration of the Pavlovian classical condition. The proposed photoelectric synergic neuromorphic transistors would have potential applications in brain-inspired multifunction intelligent perception system applications.
引用
收藏
页码:2780 / 2789
页数:10
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