Comparison of SOS MOSFET's Equivalent Circuit Parameters Extracted From LCR Meter and VNA Measurement

被引：3

作者：

Bertling, Karl ^{[1
]}

Rakic, Aleksandar D. ^{[1
]}

Yeow, Yew Tong ^{[1
]}

Brawley, Andrew ^{[2
]}

Domyo, Hiroshi ^{[3
]}

Rotella, Francis M. ^{[3
]}

机构：

[1] Univ Queensland, Sch Informat Technol & Elect Engn, Brisbane, Qld 4072, Australia

[2] Silanna Semicond Pty Ltd, Sydney Olympic Pk, NSW 2127, Australia

[3] Peregrine Semicond, San Diego, CA 92121 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 01期

关键词：

Modeling; MOSFET; parameter estimation; parameter extraction; small-signal equivalent circuit; silicon-on-sapphire (SOS); MOS-TRANSISTOR CAPACITANCES; ON-SAPPHIRE MOSFETS; RF; FREQUENCY; MODEL; CMOS; GATE;

D O I：

10.1109/TED.2011.2170426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we critically compare two techniques for the parametrization of silicon-on-sapphire MOSFETs' high-frequency small-signal equivalent circuit and discuss the scalability of high-frequency equivalent circuit parameters. We demonstrate that the same values of the high-frequency circuit elements are obtained from both the vector network analyzer and the low-frequency LCR measurements. We show that this holds even when majority carriers in the isolated body of the transistor are not in the equilibrium state, implying that the equivalence does not depend on quasi-static response of the carriers.

引用

页码：20 / 25

页数：6

共 17 条

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Bertling, K.
Rakic, A. D.
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Rotella, F. M.
ELECTRONICS LETTERS, 2010, 46 (12) : 863 - U85
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