Ge:Ga far-infrared photoconductor 2D direct hybrid array

被引：9
|
作者：
Hiromoto, N [1 ]
Fujiwara, M [1 ]
Shibai, H [1 ]
Hirao, T [1 ]
Nakagawa, T [1 ]
Kawada, M [1 ]
机构：
[1] Commun Res Lab, Tokyo 1848795, Japan
来源：
INFRARED ASTRONOMICAL INSTRUMENTATION, PTS 1-2 | 1998年 / 3354卷
关键词：
Ge : Ga photoconductor; far-infrared; two-dimensional array; direct hybrid; indium bump; pMOS readout circuit;
D O I：
10.1117/12.317304
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
Ge:Ga far-infrared photoconductor two-dimensional (2D) direct hybrid arrays are being developed for application in the focal-plane detectors of the Far Infrared Surveyor (FIS), one of the two main instruments of the Infrared Imaging Surveyor (IRIS) satellite. The arrays are composed of Ge:Ga photoconductor arrays fabricated on one chip, Si-pMOS readout integrated circuits, and a hybridization of them done by using indium bump technology.
引用
收藏
页码：48 / 56
页数：9
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