Magnetoresistance of trilayer films with Fe3O4

被引:7
|
作者
Kida, A. [1 ]
Yamamoto, C.
Doi, M.
Asano, H.
Matsui, M.
机构
[1] Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan
关键词
half-metal; magnetite; GMR; Fe3O4;
D O I
10.1016/j.jmmm.2003.12.806
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetoresistance of [Co/M/ Fe3O4](M = Pt, Cu, TiN) trilayer films has been investigated. The high-quality Fe3O4 film prepared by the magnetron spattering method using Ar - H-2 gas has been used. The GMR effect has been observed only for [Co/Cu/ Fe3O4]. The GMR values are 0.1% and 0.7% at RT and 4.2 K, respectively. The magnetoresistance effect for trilayers using Fe3O4 film is discussed, considering the current ratio among three layers. (C) 2003 Elsevier B. V. All rights reserved.
引用
收藏
页码:E1559 / E1561
页数:3
相关论文
共 50 条
  • [1] Study on magnetoresistance for trilayer with Fe3O4 film
    Kida, A
    Kodera, K
    Ohmori, K
    Asano, H
    Matsui, M
    PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 2283 - 2286
  • [2] Magnetoresistance in bicrystal Fe3O4 thin films
    Bollero, A
    Ziese, M
    Esquinazi, P
    Dörr, K
    Mönch, I
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2005, 290 : 1134 - 1137
  • [3] Magnetoresistance of Fe3O4/Au/Fe3O4 and Fe3O4/Au/Fe spin-valve structures
    van Dijken, S
    Fain, X
    Watts, SM
    Nakajima, K
    Coey, JMD
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 280 (2-3) : 322 - 326
  • [4] Oscillatory tunneling magnetoresistance in Fe3O4/GaAs/Fe3O4 junction
    Huang, Z.
    Yue, J.
    Wang, J.
    Zhai, Y.
    Xu, Y.
    Wang, B.
    2015 IEEE MAGNETICS CONFERENCE (INTERMAG), 2015,
  • [5] Mechanism of grain-boundary magnetoresistance in Fe3O4 films
    Ziese, M
    Höhne, R
    Semmelhack, HC
    Reckentin, H
    Hong, NH
    Esquinazi, P
    EUROPEAN PHYSICAL JOURNAL B, 2002, 28 (04): : 415 - 422
  • [6] Asymmetric anisotropic magnetoresistance in epitaxial Fe3O4 thin films
    Chen, B. L.
    Ding, Z.
    Ma, D. H.
    Li, J. X.
    Xiao, X.
    Wu, Y. Z.
    PHYSICS LETTERS A, 2015, 379 (30-31) : 1780 - 1784
  • [7] The magnetization reversal and low field compensation in a Fe3O4/Mn3O4/Fe3O4 trilayer
    Lin, S. C.
    Kuo, K. M.
    Chern, G.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [8] Large magnetoresistance effects in Fe3O4
    Liu, X. H.
    Chang, C. F.
    Tjeng, L. H.
    Komarek, A. C.
    Wirth, S.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2019, 31 (22)
  • [9] Magnetoresistance of epitaxial and polycrystalline Fe3O4 films near Verwey transition
    Liu, Xiang
    Mi, Wenbo
    Zhang, Qiang
    Zhang, Xixiang
    APPLIED PHYSICS LETTERS, 2018, 113 (01)
  • [10] Oscillatory Tunneling Magnetoresistance in Fe3O4/n-GaAs/Fe3O4 Junction
    Huang, Z. C.
    Yue, J. J.
    Wang, J.
    Zhai, Y.
    Xu, Y. B.
    Wang, B. P.
    IEEE TRANSACTIONS ON MAGNETICS, 2015, 51 (11)