650V IGBT4: The optimized device for large current modules with 10 μs short-circuit withstand time

被引：0

作者：

Haertl, Andreas ^{[1
]}

Baessler, Marco ^{[1
]}

Knecht, Martin ^{[1
]}

Kanschat, Peter ^{[1
]}

机构：

[1] Infineon Technol AG, Neubiberg, Germany

来源：

INTERNATIONAL EXHIBITION AND CONFERENCE FOR POWER ELECTRONICS, INTELLIGENT MOTION AND POWER QUALITY 2010 (PCIM EUROPE 2010), VOLS 1 AND 2 | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the new Infineon 650V IGBT4. Designed especially for medium and large current applications 1(nom)> 300A, in comparison with the 600V IGBT3 the device offers a better softness during switch-off, and a higher blocking voltage capability. The measures used to realize these features were to increase the chip thickness, to reduce the MOS channel width, and to enhance the back-side emitter efficiency. As a consequence, also the short-circuit robustness is significantly improved.

引用

页码：28 / 31

页数：4