Modulation of energy band gap of ZnO thin films grown by pulsed laser deposition

被引：0

作者：

Lee, SY ^{[1
]}

Li, Y ^{[1
]}

Lee, JS ^{[1
]}

Lee, JK ^{[1
]}

Nastasi, M ^{[1
]}

Crooker, SA ^{[1
]}

Jia, QX ^{[1
]}

Kang, HS ^{[1
]}

Kang, JS ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

NEW APPLICATIONS FOR WIDE-BANDGAP SEMICONDUCTORS | 2003年 / 764卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing; parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the: change of the stoichiometry of ZnxCd1-xO as illustrated by Rutherford backscattering spectroscopy.

引用

页码：413 / 417

页数：5

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