Thermoelectric characteristics of Si/Ge superlattice thin films at temperatures less than 300 K

We have studied the thermoelectric characteristics of Si/GeAu superlattice thin films at temperatures ranging from 290 K to 75 K and compared them to those of the SiGeAu alloy thin film. In the annealed Si/GeAu superlattice, the electrical resistivity was lower than that of the unannealed Si/GeAu superlattice at all temperatures. The annealed Si/GeAu superlattice showed a high thermoelectric power of 105 muV/K at 290 K. At temperatures less than 200 K, however, the polarity of the thermoelectric power of the unannealed Si/GeAu superlattice switched from positive to negative and a large negative thermoelectric power of -4.6 mV/K was attained at 80 K. On the other hand, the characteristics of all samples showed no magnetic field effect at all temperatures. To explain the causes of the extremely small variations in the characteristics by the magnetic field effects, we calculated the transport coefficients for the SiGeAu alloy using the two-band parabolic model, and compared them to those of experimentally measured values. When a large amount of acceptor concentration from Au doping and the very low carrier mobility were assumed, similar transport coefficients to the measured ones resulted.