Nonvolatile Memories: Present and Future Challenges

被引:0
|
作者
Vatajelu, Elena Ioana [1 ]
Aziza, Hassen [2 ]
Zambelli, Cristian [3 ]
机构
[1] Politecn Torino, Dip Automat & Informat, Turin, Italy
[2] Aix Marseille Univ, IM2NP, UMR CNRS 7334, Marseille, France
[3] Univ Ferrara, Dip Ingn ENDIF, Ferrara, Italy
关键词
Flash Memory; Resistive RAM; Magnetic RAM; Process Variability; Reliability; OXIDE;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Due to the rapid development of hand-held electronic devices, the need for high density, low power, high performance SoCs has pushed the well-established embedded memory technologies to their limits. To overcome the existing memory issues, emerging memory technologies are being developed and implemented. The focus is placed on non-volatile technologies, which should meet the high demands of tomorrow applications. The nonvolatile memory technologies being intensively researched today are the Flash memories and the emerging resistive and magnetic type random access memories. This paper presents an overview of device level operation of these nonvolatile memories, with special emphasis on the fabrication-and aging-induced reliability issues.
引用
收藏
页码:61 / 66
页数:6
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