Flash Memory;
Resistive RAM;
Magnetic RAM;
Process Variability;
Reliability;
OXIDE;
D O I:
暂无
中图分类号:
TP3 [计算技术、计算机技术];
学科分类号:
0812 ;
摘要:
Due to the rapid development of hand-held electronic devices, the need for high density, low power, high performance SoCs has pushed the well-established embedded memory technologies to their limits. To overcome the existing memory issues, emerging memory technologies are being developed and implemented. The focus is placed on non-volatile technologies, which should meet the high demands of tomorrow applications. The nonvolatile memory technologies being intensively researched today are the Flash memories and the emerging resistive and magnetic type random access memories. This paper presents an overview of device level operation of these nonvolatile memories, with special emphasis on the fabrication-and aging-induced reliability issues.
机构:
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, ChinaLaboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, China
PAN, Feng
CHEN, Chao
论文数: 0引用数: 0
h-index: 0
机构:
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, ChinaLaboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, China
CHEN, Chao
WANG, Zhi-shun
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h-index: 0
机构:
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, ChinaLaboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, China
WANG, Zhi-shun
YANG, Yu-chao
论文数: 0引用数: 0
h-index: 0
机构:
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, ChinaLaboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, China
YANG, Yu-chao
YANG, Jing
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h-index: 0
机构:
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, ChinaLaboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, China
YANG, Jing
ZENG, Fei
论文数: 0引用数: 0
h-index: 0
机构:
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, ChinaLaboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing,100084, China
机构:
Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R ChinaTsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Pan, Feng
Chen, Chao
论文数: 0引用数: 0
h-index: 0
机构:
Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R ChinaTsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Chen, Chao
Wang, Zhi-shun
论文数: 0引用数: 0
h-index: 0
机构:
Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R ChinaTsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Wang, Zhi-shun
Yang, Yu-chao
论文数: 0引用数: 0
h-index: 0
机构:
Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R ChinaTsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Yang, Yu-chao
Yang, Jing
论文数: 0引用数: 0
h-index: 0
机构:
Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R ChinaTsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
Yang, Jing
Zeng, Fei
论文数: 0引用数: 0
h-index: 0
机构:
Tsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R ChinaTsinghua Univ, Adv Mat Lab, Dept Mat Sci & Engn, Beijing 100084, Peoples R China