Large-format Multi-wafer Production of 5" GaSb-based Photodetectors by Molecular Beam Epitaxy

GaSb and its heterostructures grown by molecular beam epitaxy (MBE) have received much attention given their application in a wide range of mid-wave and long-wave IR photodetector applications. With the maturation of the MBE growth process, focus is now turned to improving manufacturing readiness and the transition to the production of large-format wafers. We will discuss the transition from the development of early detector layer structures on 2 '' diameter GaSb substrates, through today's 3 ''/4 '' production standard, and to the onset of 5 '' pilot production from the perspective of volume compound semiconductor manufacturing. We will report on the growth of 5 '' GaSb-based MWIR nBn detector structures using a large format 5x5" production MBE platform. Structural and optical properties, as well as electrical data from large-area mesa diodes will be presented and compared with results achieved with smaller batch size MBE reactor platform.