Structural, Optical, and Electrical Properties of Copper Oxide Films Grown by the SILAR Method with Post-Annealing

Copper oxides are widely used in photocatalysts, sensors, batteries, optoelectronic, and electronic devices. In order to obtain different material properties to meet the requirements of different application fields, varied technologies and process conditions are used to prepare copper oxides. In this work, copper oxide films were grown on glass substrates by a successive ionic layer adsorption and reaction (SILAR) method with subsequent annealing under an atmospheric environment. The films were characterized by using an X-ray diffractometer, Raman spectrometer, Scanning electron microscope, UV-Visible-NIR spectrophotometer, and Hall Effect measurement. The results show that the as-deposited film has a Cu2O crystal structure, which begins to transform into Cu2O-CuO mixed crystal and CuO crystal structure after annealing at 300 degrees C for a period of time, resulting in the bandgap of being reduced from 1.90 to 1.34 eV. The results show that not only are the crystal structure and bandgap of the films affected by the post-annealing temperature and time, but also the resistivity, carrier concentration, and mobility of the films are varied with the annealing conditions. In addition, the film with a Cu2O-CuO mixed crystal shows a high carrier mobility of 93.7 cm(2)center dot V-1 center dot s(-1) and a low carrier concentration of 1.8 x 10(12) cm(-3) due to the formation of a Cu2O-CuO heterojuction.