Stimulated orientation of Si films by solid-phase recrystallization on a ZnS film/glass substrate

This paper presents the results of a chemical vapor deposition study on a new heteroepitaxial system in which highly oriented silicon (Si) films are grown on an evaporated ZnS film/glass substrate. The crystallization of the Si film is stimulated using highly oriented ZnS film as a buffer layer on an amorphous glass substrate, Through solid-phase recrystallization, as-deposited amorphous Si films on ZnS film/grass changed to Si films exhibiting <211> preferred orientation. Si film on ZnS film/glass can be recrystallized effectively to have highly preferred orientation as the heat-treatment time increases. The <211> preferred oriented Si films could be obtained on an insulator by forming ZnS evaporated film on a glass substrate. (C) 1999 The Electrochemical Society. S0013-4651(98)07-073-X. All rights reserved.