A highly linear low-voltage MOS transconductor

被引：0
|
作者：
Leuciuc, A [1 ]
Zhang, Y [1 ]
机构：
[1] SUNY Stony Brook, Dept Elect & Comp Engn, Stony Brook, NY 11794 USA
来源：
2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL III, PROCEEDINGS | 2002年
关键词：
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a new linear MOS transconductor consisting of a differential pair with resistive source degeneration and an extra pair of op-amps to increase the linearity. The proposed transconductor operates at a 1.8V supply voltage and the achieved THD is better than -80dB up to 2.5MHz for a 0.8Vp-p input differential voltage.
引用
收藏
页码：735 / 738
页数：4
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