Benefits of XPS nanocharacterization for process development and industrial control of thin SiGe channel layers in advanced CMOS technologies

被引：6

作者：

Fauquier, L. ^{[1
,2
,3
]}

Pelissier, B. ^{[2
,3
]}

Jalabert, D. ^{[2
,4
]}

Pierre, F. ^{[2
,5
]}

Hartmann, J. M. ^{[2
,5
]}

Roze, F. ^{[1
]}

Doloy, D. ^{[1
]}

Le Cunff, D. ^{[1
]}

Beitia, C. ^{[2
,5
]}

Baron, T. ^{[2
,3
]}

机构：

[1] STMicroelectronics, 850 Rue Jean Monnet, F-38920 Crolles, France

[2] Univ Grenoble Alpes, F-38000 Grenoble, France

[3] CNRS, LTM, MINATEC Campus, F-38054 Grenoble, France

[4] CEA, INAC, SP2M, LEMMA, F-38000 Grenoble, France

[5] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 70卷

关键词：

SPECTROSCOPY; OXIDATION; ANGLE;

D O I：

10.1016/j.mssp.2016.10.028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Si channel of advanced p-type transistors has been replaced by a compressively strained Silicon Germanium channel (SiGe) in order to improve the device performances. The SiGe thickness and composition must be precisely controlled to reproducibly obtain the same characteristics. In this study, the benefits of X-ray Photoelectron Spectroscopy (XPS) for the process development and the industrial control of thin SiGe channel layers are shown. The use of a parallel Angle Resolved XPS (pARXPS) allowed us to obtain the germanium distribution in very thin SiGe channels, a useful information to better understand the impact of various process steps on the germanium distribution. The hybridization of in-line XPS and X-Ray Reflectivity (XRR) has been used as an industrial process control characterization method to jointly determine the SiGe channel's thickness and germanium composition. This hybrid industrial metrology technique has shown promising results.

引用

页码：105 / 110

页数：6

共 4 条

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