Phonon thermal transport in copper: The effect of size, crystal orientation, and grain boundaries

被引:6
|
作者
Saether, Sandra [1 ]
Erichsen, Merete Falck [1 ]
Xiao, Senbo [1 ]
Zhang, Zhiliang [1 ]
Lervik, Anders [2 ]
He, Jianying [1 ]
机构
[1] Norwegian Univ Sci & Technol NTNU, Fac Engn, Dept Struct Engn, N-7491 Trondheim, Norway
[2] Norwegian Univ Sci & Technol NTNU, Fac Nat Sci, Dept Chem, N-7491 Trondheim, Norway
关键词
EMBEDDED-ATOM-METHOD; MOLECULAR-DYNAMICS; CONDUCTIVITY; FILMS; PREDICTION; METALS; MODEL; HEAT;
D O I
10.1063/5.0094170
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In electronic devices at the micro- and nanoscale, thermal management is vital. At such small sizes, crystal orientation, grain boundaries, and even the size itself can play an important role in the thermal transport and need to be taken into careful consideration when devices are designed. In this article, we perform computational experiments using non-equilibrium molecular dynamics simulations to evaluate the effect of size, orientation, and grain boundaries on the phonon thermal transport of copper. In addition, we compare the results obtained from the rescale and Langevin thermostat procedures. We find that the contribution of phonons to the total thermal conductivity in copper increases as the size decreases. Furthermore, the sigma 5(210)[001] twist grain boundary is found to have a significant effect on the thermal transport of a bi-crystalline copper system when the grains are 15 nm. No such effect is found for the sigma 3(112)[110] twin boundary. The effect of crystal orientation on the thermal conductivity is also studied, and no discerned effect can be observed. It is found that the Langevin thermostat leads to an over-estimation of the thermal conductivities at smaller scales and should be used with caution. Published under an exclusive license by AIP Publishing.
引用
收藏
页数:9
相关论文
共 50 条
  • [1] Phonon thermal transport through tilt grain boundaries in strontium titanate
    Zheng, Zexi
    Chen, Xiang
    Deng, Bowen
    Chernatynskiy, Aleksandr
    Yang, Shengfeng
    Xiong, Liming
    Chen, Youping
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (07)
  • [2] Effect of grain boundaries on thermal transport in graphene
    Serov, Andrey Y.
    Ong, Zhun-Yong
    Pop, Eric
    APPLIED PHYSICS LETTERS, 2013, 102 (03)
  • [3] Effect of grain boundaries and crystal orientation on etching behavior of 12 ?m thick rolled copper foil
    Zhao, Weichao
    Feng, Rui
    Wang, Xiaowen
    Wang, Yongxiao
    Pan, Yaokun
    Gong, Benkui
    Han, Xinjun
    Feng, Tianjie
    MATERIALS TODAY COMMUNICATIONS, 2023, 34
  • [4] THE ORIENTATION OF GRAIN-BOUNDARIES IN ANNEALED COPPER
    DINGLEY, DJ
    BOAL, T
    PHILLIPS, PJ
    ELECTRON MICROSCOPY AND ANALYSIS 1993, 1993, (138): : 377 - 380
  • [5] Indentation Size Effect in Electrodeposited Nickel with Different Grain Size and Crystal Orientation
    Hausild, Petr
    Cech, Jaroslav
    Karlik, Miroslav
    Legros, Marc
    Nohava, Jiri
    Merle, Benoit
    CRYSTALS, 2023, 13 (09)
  • [6] Effect of Grain Boundaries and Grain Orientation on Structure and Properties
    Hansen, N.
    Huang, X.
    Winther, G.
    METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2011, 42A (03): : 613 - 625
  • [7] Effect of Grain Boundaries and Grain Orientation on Structure and Properties
    N. Hansen
    X. Huang
    G. Winther
    Metallurgical and Materials Transactions A, 2011, 42 : 613 - 625
  • [8] Hierarchical thermoelectrics: crystal grain boundaries as scalable phonon scatterers
    Selli, Daniele
    Boulfelfel, Salah Eddine
    Schapotschnikow, Philipp
    Donadio, Davide
    Leoni, Stefano
    NANOSCALE, 2016, 8 (06) : 3729 - 3738
  • [9] Effect of degree of super cooling on silicon crystal orientation and grain size
    Lu, Xuemei
    Zhao, Bo
    Xu, Fanghua
    Wang, Cheng
    Taiyangneng Xuebao/Acta Energiae Solaris Sinica, 2015, 36 (05): : 1136 - 1140
  • [10] Effect of mass transport along interfaces and grain boundaries on copper interconnect degradation
    Zschech, E
    Meyer, MA
    Langer, E
    MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2004, 2004, 812 : 361 - 372