Development of flash lamp annealing system for 300mm wafer

被引：2
|
作者：
Yamashita, K [1 ]
Nishimori, H [1 ]
Yoshioka, M [1 ]
Kusuda, T [1 ]
Arikado, T [1 ]
Okumura, K [1 ]
机构：
[1] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan
来源：
2003 IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS | 2003年
关键词：
D O I：
10.1109/ISSM.2003.1243253
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A flash lamp annealing system has been developed for processing ultra shallow junctions in a 300mm. The damaged layer, formed during ion implantation, absorbs the light radiation from the flash lamp, transforming it into heal energy The carrier concentration is the highest near the ion implant mean range. The optimization of the irradiation energy and time has enabled the processing of a uniform sheet resistance distribution over a 300mm wafer In addition, a uniform junction depth, Xj, of 16nm was obtained over the entire area of a 300mm wafer.
引用
收藏
页码：153 / 156
页数：4
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