Precision control of halo implantation for scaling-down ULSI manufacturing

被引：1

作者：

Wang, LL ^{[1
]}

Liu, JN ^{[1
]}

Guo, BN ^{[1
]}

Zhao, ZY ^{[1
]}

机构：

[1] Spans LLC, Austin, TX USA

来源：

ISSM 2005: IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS | 2005年

关键词：

D O I：

10.1109/ISSM.2005.1513336

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work is a study on process control of halo implants of MOS transistors in the ULSI manufacturing. We present the electrical test data corresponding to halo implant changes on the NMOS and PMOS transistors of a high density, high performance flash memory device of 0.11 mu m technology node. Device threshold voltage is found to he sensitive to small variationsins of both implant and wafer orientation angles. It is observed that the PMOS device is more sensitive to angle changes than the NMOS device. A TCAD model is made to simulate the device characteristics and the device performance is correlated.

引用

页码：204 / 207

页数：4

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