A sputter equipment simulation system for VLSI device

被引：5
|
作者：
Ohta, T [1 ]
Yamada, H [1 ]
机构：
[1] NEC Corp Ltd, ULSI Device Dev Labs, Sagamihara, Kanagawa 229, Japan
来源：
VACUUM | 1998年 / 51卷 / 04期
关键词：
D O I：
10.1016/S0042-207X(98)00238-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In order to optimize the sputter deposition process to fill a minute VLSI's contact hole efficiently, we have developed a practical sputter equipment simulation system named "SimDepo". The system is composed of (1) the trajectory calculation of sputtered particles using the Monte Carlo method taking into account the collisions of the sputtered particles with the background gas, (2) the profile calculation using the quasi-axis-symmetrical (QAS) approximation, (3) the ejection angle calculation using molecular dynamic model for target atom scattering and (4) the flow calculation considering surface diffusion occurring to minimize the surface free energy. Using this system, the simulated profiles of collimated sputter titanium (Ti) well agree with the experimental profiles within 5% accuracy. This system is also applied to the aluminum sputter deposition process. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：479 / 484
页数：6
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