Improved Stability of MAPbI3 Perovskite Solar Cells Using Two- Dimensional Transition-Metal Dichalcogenide Interlayers

被引:14
|
作者
Kim, Bora [1 ]
Kim, Moonhoe [2 ]
Kim, Hyojung [3 ]
Jeong, Sohee [4 ]
Yang, JungYup [2 ]
Jeong, Mun Seok [5 ,6 ]
机构
[1] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea
[2] Kunsan Natl Univ, Dept Phys, Gunsan 54150, South Korea
[3] Sungkyunkwan Univ, Ctr Composite Mat & Concurrent Design, Suwon 16419, South Korea
[4] Sungkyunkwan Univ, SKKU Inst Energy Sci & Technol SIEST, Artificial Atom & Quantum Mat Ctr, Dept Energy Sci, Suwon 16419, South Korea
[5] Hanyang Univ, Dept Phys, Seoul 04763, South Korea
[6] Hanyang Univ, Dept Energy Engn, Seoul 04763, South Korea
基金
新加坡国家研究基金会;
关键词
perovskite solar cell; stability; transition-metal dichalcogenide; interface engineering; interlayer; HOLE-TRANSPORT LAYER; SPIRO-OMETAD; PERFORMANCE; EFFICIENT; ELECTRON; TEMPERATURE; MIGRATION;
D O I
10.1021/acsami.2c08680
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Perovskite solar cells (PSCs) have been receiving considerable attention as next-generation solar cells. However, their short lifetime is a major obstacle to their commercialization. In addition to the properties of the materials used in PSCs, their interfaces play an important role in device stability by maintaining their initial design. In this study, we developed a transition-metal dichalcogenide (TMD) as a stable and efficient interlayer. MoS2 and WSe2 were applied to both the hole and electron transport sides of the PSCs with general FTO/TiO2/MAPbI(3)/Spiro-OMeTAD/Au structures, respectively. Owing to efficient charge transfer by TMD interlayers, our PSCs achieved a 19.24% efficiency, which is higher than the efficiency of the control devices (18.22%). Furthermore, the device stability was markedly improved by the passivation and strain-release effects of the TMD interlayers. Thus, the PSCs with TMD interlayers demonstrated a stable performance over 1000 h under damp heat (85 degrees C and 85% relative humidity) conditions.
引用
收藏
页码:35726 / 35733
页数:8
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