Observation of polarization and two dimensional electron gas in AIGaN/GaN heterostructure using scanning nonlinear dielectric microscopy

被引：0
|
作者：
Hirose, K. [1 ]
Chinone, N. [1 ]
Cho, Y. [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
来源：
ISTFA 2015: CONFERENCE PROCEEDINGS FROM THE 41ST INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2015年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We measured AlGaN/GaN heterostructure using scanning nonlinear dielectric microscopy (SNDM) [1], which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which is sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Two dimensional electron gas (2DEG) was observed at the AlGaN/GaN interface. This results show that SNDM is useful method for evaluation of 2DEG profile and polarization profile in AlGaN/GaN heterostructure.
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页码：333 / 335
页数：3
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