Developments in 300mm silicon photonics using traditional CMOS fabrication methods and materials

被引：0

作者：

Baudot, C. ^{[1
]}

Douix, M. ^{[1
,2
]}

Guerber, S. ^{[1
,2
]}

Cremer, S. ^{[1
]}

Vulliet, N. ^{[1
]}

Planchot, J. ^{[1
]}

Blanc, R. ^{[1
]}

Babaud, L. ^{[1
]}

Alonso-Ramos, C. ^{[2
]}

Benedikovich, D. ^{[2
]}

Perez-Galacho, D. ^{[2
]}

Messaoudene, S. ^{[3
,4
]}

Kerdiles, S. ^{[3
,4
]}

Acosta-Alba, P. ^{[3
,4
]}

Euvrard-Colnat, C. ^{[3
,4
]}

Cassan, E. ^{[2
]}

Marris-Morini, D. ^{[2
]}

Vivien, L. ^{[2
]}

Boeuf, F. ^{[1
]}

机构：

[1] STMicroelect SAS, Technol R&D, 850 Rue Jean Monnet, F-38920 Crolles, France

[2] Univ Paris Saclay, Ctr Nanosci & Nanotechnol, F-91405 Orsay, France

[3] Univ Grenoble Alpes, F-38000 Grenoble, France

[4] CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

来源：

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2017年

基金：

欧盟地平线“2020”;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon photonics technological platforms are meant to generate derivative products and concurrently to benefit from the main advantages associated with CMOS platforms namely: high yield, system robustness, product reliability and large volume, low cost production. Nevertheless, a simultaneous innovative approach is to analogously take advantage from state-of-the-art fabrication methods and tools available in CMOS to develop new solutions and propose better performing devices to the platform.

引用

页数：4

共 50 条

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