Fatigue behavior of resistive switching in a BiFeO3 thin film

被引：6
|
作者：
Zhu, Hui [1 ]
Yang, Ying [1 ]
Jiang, Anquan [2 ]
Bai, Zilong [2 ]
Meng, Xiao [1 ]
Feng, Shiwei [1 ]
机构：
[1] Beijing Univ Technol, Sch Microelect, Fac Informat Technol, Beijing 100124, Peoples R China
[2] Fudan Univ, Coll Microelect, Shanghai 200433, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 04期
基金：
北京市自然科学基金; 中国国家自然科学基金;
关键词：
HETEROSTRUCTURES; CERAMICS; IMPRINT; MEMORY; CHARGE;
D O I：
10.7567/JJAP.57.041501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The change of the resistive switching effect in an Au/BiFeO3/SrRuO3 structure under repetitive switching was studied. The current-voltage characteristics indicated space-charge-limited (SCL) conduction. The transition voltage from ohmic to SCL, voltage of the trap-filled limit, and resistance increased with switching cycle number in the wake-up stage. Such changes were attributed to the increase of trap density caused by the release of polarization domains. Ohmic and SCL currents increased with switching cycle number after fatigue, indicating that charge carrier density increased because of oxygen vacancy generation. The change of transition voltage from ohmic to SCL showed a consistent trend. (C) 2018 The Japan Society of Applied Physics
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页数：4
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