Quantum mechanical model of electronic stopping power for ions in a free electron gas

被引：0

作者：

Chen, Y ^{[1
]}

Li, D ^{[1
]}

Wang, G ^{[1
]}

Lin, L ^{[1
]}

Tasch, AF ^{[1
]}

Banerjee, S ^{[1
]}

机构：

[1] Adv Micro Devices Inc, Sunnyvale, CA 94086 USA

来源：

IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS | 2003年

关键词：

electronic stopping power; Bethe-Bloch formula; ion implantation;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic stopping power of matter for energetic ions is analyzed in the coordinate system of the ions. This paper suggests the concept of considering electronic stopping power as the mean momentum transfer between the electronic gas ensemble, and the incident ion. For electron gas, the momentum transfer is the result of scattering caused by the incident ion. By summing the momentum transfer caused by all possible scattering events, the stopping power for the incident ion can be calculated. Specifically for ions with the screened Columb potential, explicit analytic expressions for electronic stopping have been obtained for all energies in the nonrelativistic regime. The comparison with previous empirical and theoretical models shows the calculation is consistent with previous empirical results.

引用

页码：556 / 559

页数：4

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