Preparation and characteristics of p-type ZnO by treated gaseous ammonia annealing

被引：2
|
作者：
Tang Li-Dan [1 ]
Zhang Yue [1 ,2 ]
机构：
[1] Univ Sci & Technol Beijing, Dept Mat Phys, Beijing 100083, Peoples R China
[2] Univ Sci & Technol Beijing, State Key Lab Adv Met & Mat, Beijing 100083, Peoples R China
来源：
ACTA PHYSICA SINICA | 2008年 / 57卷 / 02期
关键词：
p-type ZnO; Al plus N codoping; RF/DC magnetron sputtering;
D O I：
10.7498/aps.57.1145
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The p-type ZnO:Al films deposited by RF/DC magnetron sputtering at room temperature were treated by gaseous ammonia annealing. The characteristics were examined by XRD, FESEM and Hall measurement. The results showed that the films crystallized in the wurzite phase with a preferential orientation along the c-axis and the surfaces are smooth and dense without visible pores and defects over the film, and the grain size was about 40-60 nm at the annealing temperature of 700 degrees C. The Hall measurement showed p-type conduction with the high carrier concentration of 8.346 x 10(18) cm(-3) and low resistivity of 25.014 Omega center dot cm when the annealing temperature was 700 degrees C.
引用
收藏
页码：1145 / 1149
页数：5
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