Growth and electrical properties of PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure liquid phase epitaxy

Temperature difference method under controlled vapor pressure (TDM-CVP) liquid phase epitaxy has been applied to the growth of PbTe using Pb solvent and with applied Te vapor pressure. Epitaxial layers with a good morphology were obtained with a growth temperature (T-g) ranging from 410 to 700 degrees C. Growth thickness as a function of growth time, subsidiary heater power, and growth temperature are measured and analyzed. All the unintentionally doped epitaxial layers are n-type. The carrier concentrations of the epitaxial layers become minimum at a Te pressure of 4 x 10(-4)-5 x 10(-4) Torr for T-g = 560 degrees C and 0.9 x 10(-3)-1 x 10(-3) Torr for T-g = 600 degrees C.