Universal bandgap bowing in group-III nitride alloys

被引：98
|
作者：
Wu, J
Walukiewicz, W
Yu, KM
Ager, JW
Li, SX
Haller, EE
Lu, H
Schaff, WJ
机构：
[1] Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Appl Sci & Technol Grad Grp, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA
[4] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 127卷 / 06期
关键词：
semiconductors; optical properties; light absorption and reflection; OPTICAL-PROPERTIES; GAP; INN; GROWTH; ENERGY; ALN;
D O I：
10.1016/S0038-1098(03)00457-5
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The energy gaps of molecular-beam-epitaxy grown wurtzite-structure In1-xAlxN alloys with x less than or equal to 0.25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of similar to0.7 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and GaAlN, these results show a universal relationship between the bandgap variations of group-III nitride alloys and their compositions. Published by Elsevier Ltd.
引用
收藏
页码：411 / 414
页数：4
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