Phase composition of selenized Cu2ZnSnSe4 thin films determined by X-ray diffraction and Raman spectroscopy

被引：67

作者：

Ganchev, M. ^{[1
]}

Iljina, J. ^{[1
]}

Kaupmees, L. ^{[1
]}

Raadik, T. ^{[1
]}

Volobujeva, O. ^{[1
]}

Mere, A. ^{[1
]}

Altosaar, M. ^{[1
]}

Raudoja, J. ^{[1
]}

Mellikov, E. ^{[1
]}

机构：

[1] Tallinn Univ Technol, Dept Mat Sci, EE-19086 Tallinn, Estonia

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 21期

基金：

美国国家科学基金会;

关键词：

Cu2ZnSnSe4; Stannite; Thin films; SOLAR-CELLS; LAYERS;

D O I：

10.1016/j.tsf.2011.01.388

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin layers of Sn onto Cu-Zn alloy with different component ratios were processed at different temperatures. Scrupulous comparative analyses were performed by room temperature Raman spectroscopy and X-ray-diffractometry. An excess of tin on the surface results in isothermal selenization at 450 degrees C in the hexagonal residuals of unstable SnSe2 in the well-crystallized Stannite - Cu2ZnSnSe4. In similar selenization conditions, copper-rich layers as precursors result in the Stannite phase with micro-immersions of CuSe. Low-temperature photoluminescence spectra of selenized films indicated to two Gaussian shaped bands at 0.81 and 1.16 eV. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：7394 / 7398

页数：5

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