Miniaturization: enabling technology for the new millenium

被引：4
|
作者：
Razeghi, M [1 ]
Mohseni, H [1 ]
机构：
[1] Northwestern Univ, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY | 2001年 / 4413卷
关键词：
D O I：
10.1117/12.425401
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The history of semiconductor devices has been characterized by a constant drive towards lower dimensions in order to increase integration density, system functionality and performance. However, this is still far fi am being comparable with the performance of natural systems such as human brain. The challenges facing semiconductor technologies in the millenium will be to move towards miniaturization. The influence of this trend on the quntum sensing of infrared radiation is one example that is elaborated here. A new generation of infrared detectors has been developed try growing layers of different semiconductors with nanometer thicknesses. The resulted badgap engineered semiconductor has superior performance compared to the bulk material. To enhance this technology further, we plan to move from quantum wells to quantum wire and quantum dots.
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页码：1 / 10
页数：10
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