Strain sensitivity of highly magnetostrictive amorphous films for use in microstrain sensors

被引:50
|
作者
Shin, KH [1 ]
Inoue, M [1 ]
Arai, K [1 ]
机构
[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan
关键词
D O I
10.1063/1.369977
中图分类号
O59 [应用物理学];
学科分类号
摘要
Strain sensitivity of amorphous (Fe90Co10)(78)Si12B10 sputtered film was studied in detail, so as to examine the potential of film for highly sensitive microstrain gauges. The film exhibited the figure of merit F = (Delta mu/mu)/epsilon (change in film permeability mu per unit strain epsilon) of 1.2 x 10(5), the value of which is comparable to that of amorphous ribbons. Reflecting the large value of F, the high-frequency impedance of the film was also subjected to change due to strain: the change in impedance of 46% was observed at 100 MHz applying a strain of 300 x 10(-6). It is also demonstrated that utilizing the strain-dependent impedance, a small strain of 0.2 x 10(-6) can be detected with the film. (C) 1999 American Institute of Physics. [S0021-8979(99)54308-9].
引用
收藏
页码:5465 / 5467
页数:3
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