Photoluminescence properties of Zn1-xMgxSe on misoriented GaAs substrates by molecular beam epitaxy

被引：5
|
作者：
Tu, RC [1 ]
Su, YK
Chou, ST
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[2] Chung Cheng Inst Technol, Dept Elect Engn, Tao Yuan 335, Taiwan
来源：
JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 12期
关键词：
D O I：
10.1063/1.368983
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the photoluminescence (PL) properties of Zn1-xMgxSe epilayers grown on GaAs substrates with different misorientation angles by molecular beam epitaxy. According to the data measured by PL and by electron-probe microanalysis, the Mg incorporation in the Zn1-xMgxSe epilayer decreases with increasing misorientation angle. In addition, the PL spectra showed that the full width at half maxima of the band-edge excitonic emission and the intensity of the defect-related donor-acceptor emission in Zn1-xMgxSe epilayers decreased appreciably when a substrate with a misorientation angle of 15 degrees was used. (C) 1998 American Institute of Physics. [S0021-8979(98)04824-5].
引用
收藏
页码：6877 / 6880
页数：4
相关论文
共 50 条
  • [1] Photoluminescence properties of Zn1-xMgxSe on tilted GaAs substrates by molecular beam epitaxy
    Tu, RC
    Su, YK
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 464 - 467
  • [2] Structural and optical properties of Zn1-xMgxSe alloys grown on GaAs(001) substrates by molecular beam epitaxy
    Huang, DM
    Wang, XJ
    Wei, YF
    Liu, XH
    Wang, J
    Wang, X
    Chen, ZG
    Lu, W
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 1085 - 1089
  • [3] Substrate misorientation effects on Zn1-xMgxSe layers grown on GaAs(111) by molecular beam epitaxy
    Wang, CW
    JOURNAL OF CRYSTAL GROWTH, 1999, 203 (03) : 355 - 361
  • [4] Two photon absorption in Zn1-xMgxSe films grown by molecular beam epitaxy technique
    Derkowska, B
    Sahraoui, B
    Glowacki, G
    Phu, XN
    Bala, W
    18TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR THE NEXT MILLENNIUM, TECHNICAL DIGEST, 1999, 3749 : 731 - 732
  • [5] Raman analysis of Zn1-xMgxSe layers grown on GaAs and ZnTe substrates
    Renucci, MA
    Frandon, J
    Glowacki, G
    Gapinski, A
    Rozploch, F
    Bala, W
    ACTA PHYSICA POLONICA A, 1996, 90 (05) : 1065 - 1069
  • [6] Photoreflectance and photoluminescence characterization of GaAs quantum wells grown by molecular beam epitaxy on flat and misoriented substrates
    MelendezLira, M
    LopezLopez, M
    HernandezCalderon, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07): : 3923 - 3927
  • [7] Luminescence of Zn1-xMgxSe, Zn1-xMgxSe:Al and Zn1-xMgxSe:I mixed crystals grown by Bridgman method
    Firszt, F
    Legowski, S
    Meczynska, H
    Oczkowski, HL
    Osinska, W
    Szatkowski, J
    Paszkowicz, W
    Spolnik, ZM
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 167 - 170
  • [8] Nonlinear optical properties of Zn1-xMgxSe and Cd1-xMgxSe crystals
    Derkowska, B.
    Essaidi, Z.
    Sahraoui, B.
    Marasek, A.
    Firszt, F.
    Kujawa, M.
    OPTICAL MATERIALS, 2009, 31 (03) : 518 - 522
  • [9] Photoluminescence, cathodoluminescence and Raman investigations of Zn1-xMgxSe mixed crystals
    Firszt, F
    Legowski, S
    Meczynska, H
    Szatkowski, J
    Isshiki, T
    Shiojiri, M
    Kozielski, M
    Szybowicz, M
    Paszkowicz, W
    SOLID STATE CRYSTALS: GROWTH AND CHARACTERIZATION, 1997, 3178 : 213 - 216
  • [10] Composition dependence of photoluminescence spectra in Zn1-xMgxSe mixed crystals
    Firszt, F.
    Legowski, S.
    Meczynska, H.
    Szatkowski, J.
    Paszkowicz, W.
    Spolnik, Z.M.
    Acta Physica Polonica A, 1995, 88 (4 pt 1)
12345