TEMPERATURE BEHAVIOR OF 4H-SIC MOS CAPACITOR USED AS A GAS SENSOR

被引：0

作者：

Pascu, Razvan ^{[1
,2
]}

Pristavu, Gheorghe ^{[1
]}

Badila, Marian ^{[1
]}

Brezeanu, Gheorghe ^{[1
]}

Draghici, Florin ^{[1
]}

Craciunoiu, Florea ^{[2
]}

机构：

[1] Univ Politehn Bucuresti, Bucharest, Romania

[2] IMT Bucharest, Natl Inst R&D Microtechnol, Voluntari, Romania

来源：

2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS) | 2014年

关键词：

Silicon Carbide; MOS Capacitor; Temperature;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature behavior of 4H-SiC MOS capacitor is investigated. A new layout with several active MOS structures is proposed. Measured C-V characteristics show good thermal stability up to 300 degrees C. The main electrical parameters of the MOS structure have been extracted by measurements on wafer and encapsulated samples.

引用

页码：185 / 188

页数：4

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