Comparison of Sensitivity and Low-Frequency Noise Contributions in Giant-Magnetoresistive and Tunneling-Magnetoresistive Spin-Valve Sensors with a Vortex-State Free Layer

被引：19

作者：

Weitensfelder, Herbert ^{[1
]}

Brueckl, Hubert ^{[2
]}

Satz, Armin ^{[3
]}

Pruegl, Klemens ^{[4
]}

Zimmer, Juergen ^{[5
]}

Luber, Sebastian ^{[5
]}

Raberg, Wolfgang ^{[5
]}

Abert, Claas ^{[1
]}

Bruckner, Florian ^{[1
]}

Bachleitner-Hofmann, Anton ^{[1
]}

Windl, Roman ^{[1
]}

Suess, Dieter ^{[1
]}

机构：

[1] Univ Vienna, Fac Phys, Christian Doppler Lab Adv Magnet Sensing & Mat, Boltzmanngasse 5, A-1090 Vienna, Austria

[2] Danube Univ Krems, Dept Integrated Sensor Syst, Krems, Austria

[3] Infineon Technol Austria AG, Siemensstr 2, A-9500 Villach, Austria

[4] Infineon Technol AG, Wernerwerkstr 2, D-93049 Regensburg, Germany

[5] Infineon Technol AG, Campeon 1-12, D-85579 Neubiberg, Germany

来源：

PHYSICAL REVIEW APPLIED | 2018年 / 10卷 / 05期

关键词：

MAGNETIC-FIELD SENSORS; TELEGRAPH NOISE; 1/F NOISE; DEPENDENCE; JUNCTIONS; MULTILAYERS; ROUGHNESS; DENSITY;

D O I：

10.1103/PhysRevApplied.10.054056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetoresistive spin-valve sensors based on the giant-magnetoresisitive (GMR) and tunneling-magnetoresisitive (TMR) effect with a flux-closed vortex-state free-layer design are compared by means of sensitivity and low-frequency noise. The vortex-state free layer allows high saturation fields up to 80 mT with negligible hysteresis, making it attractive for applications with a high dynamic range. The measured GMR devices comprise pink noise lower by a factor of 300 and better linearity in resistance but are less sensitive to external magnetic fields than TMR sensors. The results show comparable detectivity at low frequencies of about 2 mu T/root Hz for 1-mu m-diameter devices and 0.8 mu T/root Hz for 2-mu m-diameter devices at 1 Hz with ten active elements connected in series. The performance of the TMR minimum detectable field at frequencies in the white-noise limit is better by a factor of about 20 than that of the GMR devices.

引用

页数：7

共 4 条

[1] Low frequency magnetoresistive noise in spin-valve structures
Ozbay, A.
Gokce, A.
Flanagan, T.
Stearrett, R. A.
Nowak, E. R.
Nordman, C.
APPLIED PHYSICS LETTERS, 2009, 94 (20)
[2] Low-frequency magnetoresistive noise in spin-valve structures(vol 94, 202506, 2009)
Ozbay, A.
Gokce, A.
Flanagan, T.
Stearrett, R. A.
Nowak, E. R.
Nordman, C.
APPLIED PHYSICS LETTERS, 2009, 95 (26)
[3] Absence of magnetic state dependent low-frequency noise in spin-valve systems
Guo, Feng
McKusky, Greg
Dahlberg, E. Dan
PHYSICAL REVIEW B, 2013, 88 (01)
[4] Effects of layer thickness and annealing process on low-frequency noise and detectivity in tunnel magnetoresistive sensors with CoFeSiB soft magnetic layers
Manikketh, Murali Krishnan
Kulkarni, Prabhanjan D.
Nakatani, Tomoya
Suto, Hirofumi
Sakuraba, Yuya
JOURNAL OF APPLIED PHYSICS, 2024, 136 (20)

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