Quantum Ballistic Simulation Study of In0.7Ga0.3As/InAs/In0.7Ga0.3As Quantum Well MOSFET

被引：0
|
作者：
Biswas, Sudipta Romen [1 ]
Datta, Kanak [1 ]
Shadman, Abir [1 ]
Rahman, Ehsanur [1 ]
Khosru, Quazi D. M. [1 ]
机构：
[1] Bangladesh Univ Engn & Technol, Dept Elect & Elect Engn, Dhaka 1000, Bangladesh
来源：
2014 INTERNATIONAL CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING (ICECE) | 2014年
关键词：
Quantum Well MOSFET; Delta Doping; III-V Semiconductors; Ballistic Transport; 2D Electrostatics; ELECTRONICS; TRANSPORT; HEMTS;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
In this work, quantum ballistic simulation study of a novel III-V In0.7Ga0.3As/InAs/In0.7Ga0.3As Quantum Well MOSFET is presented. To simulate the device in quantum ballistic regime, nonequilibrium Green's function formalism has been used. 2D Poisson and Schrodinger equations are solved in self-consistent manner taking into account 2D electrostatics and other quantum mechanical effects. Strong carrier confinement in the In0.7Ga0.3As/InAs/In0.7Ga0.3As quantum well allows the application of efficient mode space approach in quantum ballistic simulation. Simulation results for the QW device with 30 nm gate length are reported. At the same time, effect of gate length variation on the quantum ballistic characteristics is explored.
引用
收藏
页码：671 / 674
页数：4
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