Analysis of the effect of isotope scattering on the thermal conductivity of crystalline silicon

被引:21
|
作者
Capinski, WS [1 ]
Maris, HJ
Tamura, S
机构
[1] Brown Univ, Dept Phys, Providence, RI 02912 USA
[2] Hokkaido Univ, Dept Appl Phys, Sapporo, Hokkaido 060, Japan
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 15期
关键词
D O I
10.1103/PhysRevB.59.10105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an analysis of recent thermal-conductivity measurements on crystalline silicon in which the concentration of the Si-28 isotope has been increased above the natural abundance. We calculate from the phonon Boltzmann equation the change in the conductivity due to a change in isotope concentration. The conductivity change is evaluated numerically using a realistic model of the lattice dynamics of silicon. [S0163-1829(99)01716-6].
引用
收藏
页码:10105 / 10110
页数:6
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