A Novel Design and Optimization Approach for Low Noise Amplifiers (LNA) Based on MOST Scattering Parameters and the gm/ID Ratio

被引:4
|
作者
Castagnola, Juan L. [1 ]
Dualibe, Fortunato C. [2 ]
Laprovitta, Agustin M. [1 ]
Garcia-Vazquez, Hugo [3 ]
机构
[1] Univ Catolica Cordoba, Fac Ingn, RA-5017 Cordoba, Argentina
[2] Univ Mons UMONS, Serv Elect & Microelect, B-7000 Mons, Belgium
[3] Inst Astrofis Canarias IAC, Dept Elect, San Cristobal la Laguna 38200, Spain
关键词
LNA design; gm; I-D; ACM; S-parameters; methodology; optimization; METHODOLOGY;
D O I
10.3390/electronics9050785
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This work presents a new design methodology for radio frequency (RF) integrated circuits based on a unified analysis of the scattering parameters of the circuit and the gm/I-D ratio of the involved transistors. Since the scattering parameters of the circuits are parameterized by means of the physical characteristics of transistors, designers can optimize transistor size and biasing to comply with the circuit specifications given in terms of S-parameters. A complete design of a cascode low noise amplifier (LNA) in MOS 65 nm technology is taken as a case study in order to validate the approach. In addition, this methodology permits the identification of the best trade-off between the minimum noise figure and the maximum gain for the LNA in a very simple way.
引用
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页数:17
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