Broadband infrared luminescence from bismuth-doped GeS2-Ga2S3 chalcogenide glasses

被引：1

作者：

Dong Guo-Ping ^{[2
,3
]}

Xiao Xiu-Di ^{[2
,3
]}

Ren Jin-Jun ^{[2
,3
]}

Ruan Jian ^{[2
,3
]}

Liu Xiao-Feng ^{[2
,3
]}

Qiu Jian-Rong ^{[1
]}

Lin Chang-Gui ^{[4
]}

Tao Hai-Zheng ^{[4
]}

Zhao Xiu-Jian ^{[4
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[3] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

[4] Wuhan Univ Technol, Key Lab Silicate Mat Sci & Engn, Minist Educ, Wuhan 430070, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2S3 chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS(2)-20Ga(2)S(3):0.5Bi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum (FWHM) is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2S3 chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi+. Raman scattering is also conducted to clarify the structure of glasses. These Bi-doped GeS2-Ga2S3 chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.

引用

页码：1891 / 1894

页数：4

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